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A simple top down method to fabricate an array of vertically stacked nanowires is presented. By taking advantage of the non-uniformity of the Inductive Coupled Plasma (ICP) etching process to form a scalloped sidewall followed by a subsequent stress limited oxidation step, a narrow silicon fin can be vertically patterned to form stacked nanowires with different cross-sectional shapes. The stacked...
A simple top-down method for realizing an array of vertically stacked nanowires is presented. The process utilizes the nonuniformity in inductively coupled plasma (ICP) etching to form a scallop pattern at the sidewall of a tall silicon ridge that is further trimmed to form stacked nanowires by stress-limited oxidation. The process has been demonstrated to be controllable and repeatable, starting...
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