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The 85 MeV $^{12}\hbox{C}^{6+}$ and 35 MeV $^{12}\hbox{C}^{3+} $ ion induced forward current gain degradation on 2N 6052 transistor is investigated by $I$– $V$ measurements before and after irradiation. The decrease in gain for 85 MeV C-ion irradiated transistor is drastic, indicating the device is vulnerable for higher energy irradiation. An increase in the base current leading to degradation...
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