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A WR-3 (220–330 GHz) low-noise amplifier (LNA) circuit has been developed for use in next-generation high resolution imaging applications and ultra-high capacity communication links. The submillimeter-wave monolithic integrated circuit (S-MMIC) was realized by using a 35 nm InAlAs/InGaAs based metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar waveguide...
A compact WR-1.5 (500–750 GHz) low-noise amplifier (LNA) circuit has been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 20 nm metamorphic high electron mobility transistors (mHEMTs). The realized six-stage LNA TMIC achieved a maximum gain of 15.4 dB at 576 GHz and more than 10 dB in the frequency range from 555 to 619 GHz. For low-loss packaging of the circuit, a waveguide-to-microstrip...
A compact H-band (220–325 GHz) low-noise amplifier circuit has been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 50 nm metamorphic high electron mobility transistors (mHEMTs). The realized four-stage cascode LNA achieved a small-signal gain of 31 dB at 243 GHz and more than 28 dB in the frequency range from 218 to 280 GHz. Coplanar topology in combination with cascode...
In this paper, we report on the development of a microstrip-to-waveguide transition for the WR-1.5 waveguide band (500–750 GHz). The microstrip lines and E-plane probes have been manufactured on 25 μm thick GaAs substrates. The transmission loss per single microstrip-to-waveguide transition is only 1.0 dB @ 670 GHz. The measured return losses are better than 10 dB up to 720 GHz. The single transition...
A compact H-band (220-325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier has been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 50 nm and 35 nm metamorphic high electron mobility transistors (mHEMTs). By applying the 35 nm gate-length process, a four-stage cascode amplifier circuit achieved a small-signal gain of 26 dB at 320 GHz and more than...
In this paper, we present the development of advanced W-band and G-band millimeter-wave monolithic integrated circuits (MMICs) and modules for use in a high-resolution radar system operating at 210 GHz. A W-band frequency multiplier by six as well as a subharmonically pumped 210 GHz dual-gate field-effect transistor (FET) mixer and a 105 GHz power amplifier circuit have been successfully realized...
G-band low-noise amplifier (LNA) modules have been successfully developed for use in high-resolution radiometric imaging applications. The WR-5 waveguide modules contain a four-stage 220 GHz cascode LNA MMIC and two microstrip-to-waveguide transitions which were realized on 50 mum thick quartz substrates. The monolithic amplifier circuits were fabricated using a well proven 0.1 mum InAlAs/InGaAs metamorphic...
A very compact W-band dual-channel receiver module has been developed for use in active and passive high-resolution imaging systems. The WR-10 waveguide module contains two fully integrated heterodyne receiver MMICs which have been realized using a 0.1 mum InAlAs/InGaAs based depletion type metamorphic high electron mobility transistor (MHEMT) technology in combination with conductor-backed coplanar...
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