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Si-doped AlSb polycrystalline films were grown on silex by magnetron co-sputtering. The conducting type, Hall mobility and carrier concentration of the films were determined. The films appear to be p-type indicating Si is shown to be predominantly an acceptor in AlSb, and holes as dominant charge carriers. Scanning electronic microscope (SEM) shows that prepared film is uniform and compact. The conductivity...
AlSb polycrystalline thin films were prepared by cosputtering. The structure, morphology and electrical properties of the films are studied. X-ray diffraction results show that the films are AlSb polycrystalline with a face-centered cubic structure. The use of hydrogen in the atmosphere and the higher substrate temperature are beneficial to the grain growth of the AlSb films. The intrinsic AlSb film...
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