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This paper proposes a simple and efficient method to improve hot carrier (HC) immunity of p-channel LDMOSFET without degrading typical figure of merits such as breakdown voltage BV and specific on-resistance Rsp. The superiority of a novel STI-based p-channel LDMOSFET with a hot electron cooling (HEC) layer against the conventional method to improve HC immunity (i.e. extending the p-drift length)...
This paper proposes a partially recessed-gate structure which enables to enlarge HCI lifetime of an STI-based LDMOSFET without degrading important static performances such as breakdown voltage (BV) and specific on-resistance (Rsp). This improvement in HCI characteristic is observed regardless of channel types and voltage ratings. The recessed gate is formed in a field-plate region by dry-etching the...
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