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We have demonstrated that sub-10nm-thick heteroepitaxial Ge films on Si (001) having smooth surfaces can be obtained by DC magnetron sputtering. Ge films grown at 350°C preserve the smooth surfaces with a roughness root mean square (RMS) of 0.39nm, whereas, the Ge films grown at 500°C show significant roughness with an island-like morphology. In samples grown at 350°C, it is confirmed that the Ge...
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