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Hafnium Disulfide (HfS2) is one of the transition metal dichalcogenides which is expected to have high electron mobility and finite bandgap. However, the fabrication process for HfS2 based electron devices has not been established, and it is required to bring out the superior transport properties of HfS2. In this report, we have investigated the effects of ALD HfO2 passivation on the current properties...
We successfully developed fabrication process of 16nm InGaAs channel multi gate MOSFETs with regrown source and drain by using MOVPE. This device showed 707 µA/µm of Id.max and 498 µS/µm of gm.max. On-off ratio was 103 @ Vd = 0.5V.
An InP/InGaAs composite channel MOSFET with InGaAs source is fabricated, this InGaAs source is selectively regrown by metalorganic vapor phase epitaxy. The maximum drain current of MOSFET (at VD = VG = 3 V) is 360 mA/mm at room temperature with the Si-doped channel, 20-nm-thick SiO2 gate insulator and 2 mum channel length. However, the drain current of regrown MOSFET is smaller than MOSFET without...
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