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Controlling the procedure for etching shallow trench insulation (STI) is part of the CMOS production cycle. Optical scatterometry, which allows the simultaneous replacement of several techniques used earlier, can be used to increase the reliability of and information obtained with this control process. The etching of shallow trench insulation is described in this work using a dimensional scheme that...
We present a method of Si–Ge QDs formation by ion beam implantation (IBI) technique and high temperature annealing for self-organization. Implantation doses varied from 1014 to 1017 cm–2, ion energies ranged from 50 to 150 keV, annealing proceeded at temperature of 950 to 1050°C in argon environment. Formed QDs show strong infrared (IR) photoluminescence (PL) in the temperature region 15–250 K.
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