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A 1200V, 25A bi-directional silicon UMOS-IGBT has been successfully fabricated and characterized using a hydrophobic bonding process at low temperature (400°C) for the first time. The static and dynamic performance of our previous bi-directional DMOS-IGBT using a new developed bonding approach with glass carrier wafers are also shown in this paper as a comparison.
In today's electric vehicles (PHEV/HEV/EV), an extra cooling loop is needed to lower the power-electronics coolant temperature below about 65°C from the radiator coolant temperature of 105°C. One way to reduce the cost of future electric vehicles is to eliminate the extra cooling loop by developing reliable high-temperature power inverter modules that can be cooled directly from the radiator coolant...
Chip attachment is an important step in packaging light-emitting diode (LED) chips. The attachment material provides mechanical support and heat dissipation. As high-power LED chips are targeted at general illumination applications, the thermal property of the die-attach material is critical to the light output and degradation of the lighting device. Silver epoxy, lead-free solder paste, and nanosilver...
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