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The trend towards SiC-based high power density converter requires to drive SiC MOSFET with high-speed switching. However, it tends to aggravate dv/dt effect due to the impact of parasitic parameters, resulting in shoot-through and high device stress in the half bridge configuration. In this work, a novel gate assisted circuit is proposed to eliminate shoot-through issue without compromise on switching...
To drive SiC power module with high-speed switching, the stray inductance becomes a key factor in converter design. In this work, the stray inductances of module and peripheral circuits are investigated by simulation and measurement. With the loop stray inductance of 29.2 nH, the module is tested up to 800 V and 50 A with insignificant EMI issues of ringing and overshoot. And the dv/dt ratios at turn-off...
In applications of distributed power generation and uninterruptable power supply for green and smart buildings, energy storage systems (ESS) with high voltage DC bus have been widely considered. Advanced energy storage device (ESD) such as lithium-ion batteries and super-capacitors however have low terminal voltages. Connecting many ESD cells in series is an acceptable solution but requires complex...
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