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Cu(In, Ga)Se2 (CIGS) thin films with thickness of 1μm and 2μm are prepared by co-evaporation process, and the different Ga/(Ga+In) are achieved by varying the temperature of Ga source. The morphology, structure, minimum band gap, and performance of solar cells are comparatively studied. As Ga/(Ga+In) increases, little changes can be observed in the crystal quality of 1μm CIGS films, while the grain...
Sulfurization growth of single-phase chalcopyrite CuInS2 (CIS) thin films was demonstrated using less hazardous liquid metal–organic ditertiarybutylsulfide [(t-C4H9)2S: DTBS]. The effect of sulfurization temperature and DTBS flow rate on the structural and optical properties of CIS was analyzed by scanning electron microscope, X-ray diffraction, energy dispersive X-ray spectroscopy, and photoluminescence...
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