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We demonstrate the improved hole injection into N,N′-Bis(3-methylphenyl)-N,N′-diphenylbenzidine (TPD) hole transport layer (HTL) by thermal annealing of ITO anode in hole-only devices (HODs). ITO anode was patterned and annealed at different temperatures (200, 300, and 400 °C) under the normal ambient. ITO film annealed at 400 °C shows the higher sheet resistance of 185 Ω/□ and the Hall measurement...