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This study investigates the total ionizing dose effects in graphene-based charge-trapping memory (GCTM) capacitors by using 60Co γ-irradiation. Electrical properties including C — V hysteresis window, gate leakage current, and flat band voltage shifts are evaluated with ionizing dose levels up to 1 Mrad (Si). The C — V hysteresis memory window is hardly affected by the irradiation. The gate leakage...
In this summary, the resistive random access memory (RRAM) with the structure of Pt/HfO2/Ti is investigated for applications in radiation circumstance. The heavy ion 86Kr26+ of HIRFL (The Heavy Ion Research Facility in Lanzhou) is used as the radiation source. The energy of 86Kr26+ is 25 MeV/u, the LET is 37.6 MeV/(cm2/mg), and the fluence of 5e11 is achieved after 2 hours radiation. Basic performance...
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