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We propose InAlAs/InGaAs/InP high electron mobility transistors with an asymmetric chirped dual-grating-gate structure which greatly enhances plasmon instabilities. The fabricated device demonstrates an intense stimulated emission of terahertz monochromatic radiation at cryogenic temperatures for the first time.
We demonstrate an intense stimulated emission of 0.1–1-μW terahertz (THz) monochromatic radiation in InP-based asymmetric chirped dual-grating-gate (AC-DGG) high electron mobility transistors (HEMTs) at 140–290K. In the research of modern THz electronics, development of compact, tunable and coherent sources operating in the THz regime is one of the hottest issues. Hydrodynamic nonlinearities of two-dimensional...
This paper reviews recent advances in ultrafast and ultrahigh sensitive broadband terahertz detection utilizsing asymmetric double-grating-gate InP-based high-electron-mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz under drain-unbiased conditions with a superior low noise equivalent power of 15 pW/√Hz and 6.4 kV/W even at 1.5 THz under drain-biased conditions.
Recent advances in emission and detection of terahertz radiation using two-dimensional (2D) electron systems in III–V semiconductors and graphene are described. First the 2D plasmon resonance is presented to demonstrate intense broadband terahertz emission and detection from InGaP/InGaAs/GaAs and InAlAs/InGaAs/InP material systems. The device structure is based on a high-electron mobility transistor...
We designed and fabricated InP-based high electron mobility transistors featuring an asymmetric chirped dual-grating-gate structure with a resonant-enhanced photonic vertical cavity. The device structure greatly enhances the Doppler-effect-driven plasma instability, resulting in intense monochromatic superradiant terahertz emission at 3.55 THz at 140K for the first time.
We report on ultrahigh sensitive broadband terahertz detection using asymmetric double-grating-gate high-electron-mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz with a superior low noise equivalent power of 15 pW/√Hz.
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