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Multiple studies have reported the observation of electro‐synaptic response in different metal/insulator/metal devices. However, most of them analyzed large (>1 µm2) devices that do not meet the integration density required by industry (1010 devices/mm2). Some studies emploied a scanning tunneling microscope (STM) to explore nano‐synaptic response in different materials, but in this setup there...
Conductive atomic force microscopy (CAFM) is a powerful tool for studying resistive switching at the nanoscale. By applying sequences of I-V curves and biased scans the write, erase and read operations in a dielectric can be simulated in situ. CAFM can be used to monitor the inhomogeneities produced by a previous device level stress, for example conductive filaments formation and disruption. In this...
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