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In this paper we analyze the reliability of atomically thin hexagonal boron nitride (A-BN) dielectric stacks subjected to electrical stresses. The 2D insulating stacks are grown by chemical vapor deposition, meaning that (unlike exfoliated nanosheets) they can cover large areas and are suitable for the fabrication of scalable devices using photolithography tools. By comparing HfO2 and A-BN stacks...
In the Resistive Random Access Memory (RRAM) devices, switching between high and low resistive states is controlled by the processes of disruption and restoration of a conductive filament, which could be formed through the dielectric film. In this study, we demonstrate that RS is strongly linked to the mechanical properties of the insulator that should be considered in the design of flexible memories,...
Scanning probe microscopes (SPM) are commonly used for characterization of the topographic and electrical properties of materials at the nanoscale. In such setup, the probes play a prominent role to obtain reliable imaging, but most tips lose their intrinsic properties after some measurements. Here, we modified the metal varnished atomic force microscope tips by transferring a sheet of graphene on...
Graphene electrodes are being massively introduced in a wide range of electronic devices. On the contrary, exhaustive ageing studies, which are necessary prior to device commercialization, have never been performed before. Here we present the first complete reliability study of a carbon-based electrode, and the main ageing mechanisms are discussed by means of accelerated tests, nanoscale and device...
The conducting properties of resistive switching filaments in ReRAM are studied. Departing from first-principle simulations of electron transport along paths of oxygen vacancies in HfO2, the Quantum Point Contact model is reformulated in terms of a bundle of such vacancy paths. By doing this, the number of model parameters is reduced and a much clearer link between the microscopic structure of the...
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