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For power converters with inductive loads, a freewheeling path is needed for the current due to reactive power. The <sc>MOSFET</sc> synchronous rectification (SR) is widely used to reduce the conduction loss during the freewheeling period. Due to the wide band gap of silicon carbide (SiC), the intrinsic body diode of SiC <sc>MOSFET</sc> exhibits a high voltage drop. Hence,...
Power switch devices which base on wide band-gap (WBG) semiconductor, such as silicon carbide metal-oxide-semiconductor-field-effect-transistor (SiC MOSFET) and gallium nitride high-electron-mobility transistor (GaN-HEMT) perform superior performance as compared with silicon (Si) MOSFET in high switching frequency, high blocking voltage, and high temperature operation. In this paper, a series of characteristic...
Power quality and electromagnetic interference (EMI) control are mandatory for any grid-connected power converter. This paper describes a procedure for LCL filter design in a grid-connected high power density converter (HPDC) with the objective to meet both power quality and EMI requirements. The performance of the LCL filter is simulated and then validated experimentally.
As SiC MOSFET is moving towards high current rating through parallel devices in a module, the ability to switch it fast with minimum switching loss becomes a new challenge. Amid this new challenge, power converter designers need to deal with more demanding measurement method to obtain correct switching waveforms. Switching waveforms are an important asset for converter designers because they can reveal...
This paper evaluates different passive filter topologies of the grid-connected high power density converter (HPDC) for the purpose power quality control and electromagnetic interference (EMI) reduction. The harmonics generated by the switching circuits in the HPDC affect power quality at lower frequency as well as EMI at higher frequency. Various common passive filter topologies are carefully evaluated...
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