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Among the options for a field‐effect transistor (FET) channel that can outperform silicon at low voltages, the single‐walled carbon nanotube (CNT) is a strong contender. Composed of a single atomic layer of hexagonally arranged carbon atoms that form a cylinder of ∼1 nm diameter, the CNT is able to transport electrons with zero resistance (ballistic transport) while also having an intrinsic semiconducting...
In summary, results are presented on the effects of Lg and CL scaling in CNTFETs. To consider CNTFETs for a high performance technology, any limitations related to their aggressive scaling must be understood. Devices with excellent and reproducible performance were fabricated with Lg and CL as small as 15 and 20 nm, respectively-projected achievable pitch of 45 nm, which would be suitable beyond the...
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