Data are presented demonstrating, to our knowledge, the first monolithic chip integrating a semiconductor laser with a spontaneous light emitting diode optical pump that can also act as a heat pump. The light emitting diode operates in the voltage bias regime needed to generate a thermoelectrophotonic heat absorption. Under ideal operation the light emitting diode can efficiently optically pump the...
Vertical-cavity surface-emitting lasers (VCSELs) have achieved remarkable performance in threshold, speed, and efficiency. However the VCSELs have so far achieved their performance without the benefit of a buried-heterostructure (BH) gain structure. A high quality BH gain structure can be expected to dramatically improve VCSEL performance by eliminating parasitic charging effects in the perimeter...
Nanolasers made from III–V active materials and metal-clad cavities have attracted research interest because of the small volume possible with metal nanocavities.1 Proposed applications include intrachip optical interconnects and optical sensors. The metal-clad nanocavities are one of several cavity approaches being studied, and differ from dielectric and semiconductor nanocavities in their high optical...
Laser diodes based on planar quantum wells produce power conversion efficiencies that tend to saturate at room temperature at ∼ 70%. These planar quantum well laser diodes have been heavily researched and developed and the power conversion efficiencies appear close to the material limits for optimized devices. The power conversion efficiency can be treated as a product of separate efficiencies based...
Oxide-free lithographic vertical-cavity surface-emitting lasers (VCSELs) are characterized for their thermal properties. VCSELs with minimum threshold temperatures < 20 °C demonstrate lasing at heat sink temperatures ≥ 190 °C, with high rollover cavity temperatures.
We show that the transparency current plays a central role in setting the temperature dependence of both undoped and p-doped quantum dot lasers. The influence of inhomogeneous broadening is also analyzed and shown to influence.
Low threshold QD laser with threshold current density <10 A/cm2 is experimentally shown and threshold current temperature dependence of a QD laser with an ideal delta function density of electronic states is analyzed.
Large cavity, very low threshold single layer quantum dot laser diodes with threshold current density of 10 A/cm2, output power > 2 W, and very-low internal loss of 0.25 cm-1 are achieved at CW room-temperature. Mode-locked operation of a large cavity laser diode with 40 mum stripe width is demonstrated at 3.75 GHz repetition rate.
In this presentation, a continuous-wave room temperature lasing at a threshold current density of 11.7 A/cm2 is reported. This is the lowest threshold current density ever reported for continuous-wave room temperature operation of a laser diode, to the authors' knowledge.
The physics of quantum dot lasers are studied theoretically and experimentally to study their threshold temperature dependence, and the relationship between internal loss and threshold current density.
We demonstrate strongly driven resonance fluorescence from a single InGaAs quantum dot in a planar microcavity by measuring the coherent oscillations in the second-order correlation function, g(2)(t), of the photoluminescence.
Theory and experimental results for nonphotonic devices based on epitaxial nanostructures will be presented. The devices include new types of quantum light sources, high speed nanoscale laser diodes, and energy conversion devices for harvesting thermal energy.
Photonic crystal slab nanocavities containing one layer of quantum dots have exhibited: strong coupling to a single quantum dot; tuning by condensation of xenon gas; linewidth broadening due to ensemble dot absorption; gain and lasing.
Optical characterization of a novel type of semiconductor microcavity based on a fully-buried, all-epitaxial design reveals many properties essential for a manufacturable technology. We demonstrate detailed mode-imaging, lasing, as well as a sizeable Purcell effect.
Lasing behavior under optical pumping conditions is reported for photonic crystal double-heterostructure nanocavities with InAs quantum dot active regions. Coupling of this laser emission into a photonic crystal waveguide is also reported.
The fabrication is described and data are presented on a laser diode that incorporates a buried photonic etched void pattern within its cavity. Side by side comparison with laser diodes fabricated without the pattern are used to demonstrate its influence on the laser characteristics
Summary form only given. Self-organized quantum dots (QDs) offer unique opportunities to realize new types of semiconductor lasers and spontaneous light sources. One of the more interesting and potentially important is their use in microcavities. In this paper the authors describe experimental data based on incorporating self-organized QDs in a new type of all-epitaxial microcavity that can form a...
We have demonstrated high spontaneous emission coupling factor ~ 0.1 from photonic crystal nanolasers with quantum dots. This high coupling resulted from narrow homogenous broadening of the quantum dots and the small number of resonances
Summary form only given. Recent progress in microfabrication involving, etching processes makes it possible to engineer three-dimensional (3D) nanostructures from MBE-grown planar Fabry-Perot micro-cavities. The optical mode is confined laterally by implementing a thin dielectric (native oxide) aperture layer on top of the cavity spacer. The sample under investigation consists of a 16 period GaAs/AlAs...
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