We demonstrate strongly driven resonance fluorescence from a single InGaAs quantum dot in a planar microcavity by measuring the coherent oscillations in the second-order correlation function, g(2)(t), of the photoluminescence.
Optical characterization of a novel type of semiconductor microcavity based on a fully-buried, all-epitaxial design reveals many properties essential for a manufacturable technology. We demonstrate detailed mode-imaging, lasing, as well as a sizeable Purcell effect.
Summary form only given. Recent progress in microfabrication involving, etching processes makes it possible to engineer three-dimensional (3D) nanostructures from MBE-grown planar Fabry-Perot micro-cavities. The optical mode is confined laterally by implementing a thin dielectric (native oxide) aperture layer on top of the cavity spacer. The sample under investigation consists of a 16 period GaAs/AlAs...
Data are presented showing that it is possible to optically couple a semiconductor quantum well to a mirror, and thus influence its spontaneous emission lifetime, for mirror to quantum well spacings of less than an optical wavelength. Light emitting diodes with various mirror to quantum well spacings corresponding to quantum well placement at either interference nodes or antinodes are characterised...
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