Laser diodes based on planar quantum wells produce power conversion efficiencies that tend to saturate at room temperature at ∼ 70%. These planar quantum well laser diodes have been heavily researched and developed and the power conversion efficiencies appear close to the material limits for optimized devices. The power conversion efficiency can be treated as a product of separate efficiencies based...
Low threshold QD laser with threshold current density <10 A/cm2 is experimentally shown and threshold current temperature dependence of a QD laser with an ideal delta function density of electronic states is analyzed.
Large cavity, very low threshold single layer quantum dot laser diodes with threshold current density of 10 A/cm2, output power > 2 W, and very-low internal loss of 0.25 cm-1 are achieved at CW room-temperature. Mode-locked operation of a large cavity laser diode with 40 mum stripe width is demonstrated at 3.75 GHz repetition rate.
In this presentation, a continuous-wave room temperature lasing at a threshold current density of 11.7 A/cm2 is reported. This is the lowest threshold current density ever reported for continuous-wave room temperature operation of a laser diode, to the authors' knowledge.
The physics of quantum dot lasers are studied theoretically and experimentally to study their threshold temperature dependence, and the relationship between internal loss and threshold current density.
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