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We show that the transparency current plays a central role in setting the temperature dependence of both undoped and p-doped quantum dot lasers. The influence of inhomogeneous broadening is also analyzed and shown to influence.
Low threshold QD laser with threshold current density <10 A/cm2 is experimentally shown and threshold current temperature dependence of a QD laser with an ideal delta function density of electronic states is analyzed.
A study of the threshold characteristics of quantum-dot (QD) laser diodes shows how inhomogeneous broadening and p-doping influence the QD laser's temperature dependence of threshold T0. The analysis includes the additional parameters of homogeneous broadening, quantum state populations, and threshold gain. The results show that while the source of negative T0 can occur due to different effects,...
The physics of quantum dot lasers are studied theoretically and experimentally to study their threshold temperature dependence, and the relationship between internal loss and threshold current density.
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