We study low-temperature-grown GaAs (LT-GaAs) based ultrafast Fabry-Pérot cavity photoconductors, designed for THz optoelectronics applications using 1550 nm pulsed lasers. We present here, as a proof of concept, the under-sampling of continuous RF waves up to 67 GHz.
We present a new design of InGaAs metal-semiconductor-metal (InGaAs-MSM) photodetectors placed in optical resonant cavities in order to reduce inter-electrode spacing while keeping a high photoresponse. Its static and dynamic photoresponse properties have been measured by means of a photomixing experiment up to 67 GHz, showing the potential of this device for GHz and THz applications.
We investigate optical resonant cavities using metallic mirror in order to increase the absorption in low-temperature-grown GaAs (LT-GaAs) based photoconductors operating at telecom wavelength. Two different semi-transparent front mirrors are compared: the first one is a thin gold layer whereas the second one consists of a gold periodic array. We show that the generated photocurrent is 3 times higher...
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