Low-temperature-grown GaAs (LT-GaAs)-based Fabry-Pérot cavity photoconductors, designed for RF and THz optoelectronics applications using1550 nm lasers, are studied. The sub-sampling of continuous waves at frequencies up to 300 GHz is presented. The duty-cycle-limited conversion losses measured up to 67 GHz show that this GaAs-based photoconductor behaves as a nearly perfect photoswitch controlled...
This paper presents high-efficiency Unitravelling carrier photodiodes for THz communications. Using high-level modulation schemes, QAM-16 and 32 Gbit/s data-rate is obtained using these devices, that combine high power level and linear behavior, mandatory for high-spectral efficiency data links in the THz range.
We study low-temperature-grown GaAs (LT-GaAs) based ultrafast Fabry-Pérot cavity photoconductors, designed for THz optoelectronics applications using 1550 nm pulsed lasers. We present here, as a proof of concept, the under-sampling of continuous RF waves up to 67 GHz.
We present a new design of InGaAs metal-semiconductor-metal (InGaAs-MSM) photodetectors placed in optical resonant cavities in order to reduce inter-electrode spacing while keeping a high photoresponse. Its static and dynamic photoresponse properties have been measured by means of a photomixing experiment up to 67 GHz, showing the potential of this device for GHz and THz applications.
This paper presents the development and use of high-efficiency Unitravelling carrier photodiodes for THz communications. Using these devices, high output power is obtained close to the mW level. THz wireless links demonstration is also presented using these devices, using high-level modulation schemes (QAM-16) and 32 Gbit/s data-rate. This result demonstrates the capability of the UTC-PD devices of...
We investigate optical resonant cavities using metallic mirror in order to increase the absorption in low-temperature-grown GaAs (LT-GaAs) based photoconductors operating at telecom wavelength. Two different semi-transparent front mirrors are compared: the first one is a thin gold layer whereas the second one consists of a gold periodic array. We show that the generated photocurrent is 3 times higher...
Ultrafast photoconductors using GaAs implanted by low energy N+ ions (< 55 keV) are fabricated and characterized up to 320 GHz by means of a photomixing experiment. Around 90 μW of output power was obtained at 290 GHz with a 2-μm-diameter photoconductor based on GaAs implanted with a main dose of 1.1×1012 cm−2 and a subsequent annealing at 600°C.
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