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We have developed a planar device using In-Ga-Zn-O (IGZO) semiconductor for synapse element in neural network. First, we formed the planar device on a glass substrate. Next, we formed it on an LSI wafer. Both devices shows proper uniformities of film thicknesses and sufficient degradations of electric characteristics, which can be utilized for modified Hebbian learning proposed by us. These results...
We have developed a cross-point device using In-Ga-Zn-O (IGZO) semiconductor for synapse element in neural network. Horizontal 80 and vertical 80 metal lines make 6400 cross-point synapse integrated on a glass substrate. The electrical conductance gradually degrades by flowing current, which is available for modified Hebbian learning.
Neural networks are computing models based on human brains. We propose a neural network using a field-programmable gate array (FPGA) for neurons and amorphous In-Ga-Zn-O (a-IGZO) thin films for synapses. It is found that electric current in the a-IGZO thin film gradually decreases along the time. On the other hand, the degradation does not occur when light is irradiated. These phenomena can be utilized...
We investigate MR effect of GTO thin-film devices. It is found positive and negative MR effects. Something dramatically changes in GTO thin-film devices. Moreover, it is suggested that the GTO thin-film devices with oxygen of high concentration indicate negative MR effect. This may be due to the generation of random potential and Anderson localization with oxygen. Finally, in the case of some special...
The optoelectronic characteristic of a p-i-n thin-film phototransistor is analyzed by comparing an actual device with device simulation. It is found using the actual device that the detected current is maximized when the control voltage is equal to the applied voltage. It is also found using the device simulation that a depletion layer is widely formed at that voltage because the electron mobility...
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