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We have evaluated optical and electrical characteristics of Ga-Sn-O (GTO) films deposited using mist chemical vapor deposition (CVD). It was found that the GTO film is transparent, which suggests the energy gap is wide. The X-ray diffraction (XRD) indicated that the GTO film was crystallized, but the crystal structure is not clarified now. It was also found that the sheet resistance decreases as the...
We have evaluated magnetoresistance (MR)effect of a Ga-Sn-O (GTO) film deposited using mist chemical vapor deposition (CVD). It is found that the as-deposited film shows negative MR effect, whereas the annealed film shows positive MR effect. We assume that this phenomenon occurs because the carrier transportation shifts from the Anderson localization to band transportation as the film structure changes...
We have evaluated Ga-Sn-O (GTO) films fabricated using mist chemical vapor deposition (CVD). First, it is found that the GTO films are roughly transparent. Moreover, as the deposition temperature decreases, the transmittance becomes higher. Next, it is found that even if the carrier gas speed changes, the sheet resistance is roughly the same. However, as the composition ratio in the material solution...
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