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This paper presents a detailed Monte Carlo study of the optimization of the dopant segregation (DS) layer in n-type Schottky barrier (SB)-MOSFET. It is shown that with a careful control of the DS layer parameters, dopant concentration (N$_{\rm {dop}}$ ), and length (L$_{\rm {dop}}$ ), the performance of the devices is significantly enhanced. The presence of the DS layer induces crucial effects in...
In this work, the instantaneous velocity and momentum fluctuations in suspended monolayer graphene are investigated by means of an ensemble Monte Carlo simulator. Due to the particular properties of graphene bandstructure (conical dispersion relationship near the Dirac points), instantaneous velocity fluctuations show a non-linear dependence with time during free flights, being limited by the maximum...
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