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A two-step gate-recess process combining high selective wet-etching and non-selective digital wet-etching techniques has been proposed for InAlAs/InGaAs InP-based high electron mobility transistors (HEMTs). High etching-selectivity ratio of InGaAs to InAlAs material larger than 100 is achieved by using mixture solution of succinic acid and hydrogen peroxide (H2O2). Selective wet-etching is validated...
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