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The i-ZnO film and n-ZnO : Al film were deposited on n-GaN layer using vapor cooling condensation system and sputter, respectively. The dark current of the resulting p-GaN/i-ZnO/n-ZnO : Al-heterostructured photodetectors was 4.11 pA. The rejection ratio between ultraviolet wavelength at 360 nm and visible wavelength at 420 nm was 3.0 103 at a zero bias voltage. The low frequency noise exhibited the...
In this work, the transparent thin film transistors (TTFTs) with slightly Al-doped ZnO films as the channel layers were fabricated by a magnetron radio frequency co-sputtering system. The performances of the TTFTs with various thicknesses of the channel layers were characterized. When the thickness of the channel layer was 25 nm, the field-effect carrier mobility and the on/off current ratio of the...
The MgxZn1-xO thin films for x varying from 0 to 0.36 were deposited by RF magnetron sputtering. The MgxZn1_xO films are characterized by X-ray diffraction and UV-visible spectroscopy. The MgxZn1-xO metal-semiconductor-metal ultraviolet photocodetectors (MSM-UPDs) were fabricated. We also investigated the electrical and optical properties of the MSM-UPDs.
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