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Phosphorylated adsorbent is commonly used in the extraction of rare earth metals and radioactive waste because of its high affinity in acidic condition. In this study, adsorbent containing phosphoric acid groups was synthesized by one-step radiation-induced grafting of 2-hydroxyl methacrylate phosphoric acid monomer (2-HMPA) onto kenaf fibers. The kenaf fibers were pre-treated with sodium chlorite...
This paper investigates the effects of top fin width scaling (Wtop = 4, 6, 8 nm) of p-and n-type 10-nm FinFET on the electrical performance of the device, specifically optimized for low performance (LP) and high performance (Hp) devices. The work also studies the correlation of the metal work function to the device performance. It is observed that the transfer characteristics shown increased drain...
The basic requirements on process design of extremely scaled devices involve appropriate work function and tight doping control due to their significant effect on the threshold voltage as well as other critical electrical parameters such as drive current and leakage. This paper presents a simulation study of 22-nm fin field-effect transistor (FinFET) performance based on various process design considerations...
Determining the exact device parameter for a particular transistor is crucial in order to ensure the device is operating at their best possible conditions. This paper discusses the application of Taguchi method on device parameter design for a 7nm germanium p-FinFET with optimization using design of experiments. In this work, the Sentaurus Simulator is used as the medium of simulation and analysis...
Selecting the material used as the device channel which connects the source to drain region is vital as it will affect the conductivity of the transistor. Recently, germanium was actively used as the diffusion material for source/drain and channel properties mainly for ρ type FinFET, however rarely in η type FinFET. This paper investigates the device performance of 7nm nFinFET for their various types...
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