The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Since large array devices of MOSFETs are huge for driving capabilities, ESD self protections are also required. Then, the large drain-contact-to-poly-gate-spacing layout rule is usually adopted with large layout areas. In this paper, a new control circuit is implemented for adopting the minimum device layout rule in the LAD. Hence, it results in a very small layout area and ESD self-protection capabilities...
This paper investigates techniques for N-type high-resistance polysilicon resistors to reduce the resistance deviation which is caused by the back-end mechanical stress. In the back-end layers of the wafer, a top metal thickness equal to $3~\mu \text{m}$ is provided to increase the heat allowing current density in the metal routes of power ICs. The top metal processing yields the mechanical stress...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.