The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this work, the impacts of both nanowire diameter (Dnw) and Ge content (%) on the performance of Si1−xGex Gate-All-Around nanowire p-channel FETs (GAA pNWTs) are investigated. The variations in SiGe GAA pNWTs induced by Dnw variation, Ge content variation and some stochastic process variations including of random dopants fluctuation (RDF), gate edge roughness (GER), and metal gate granularity (MGG)...
In this work, the SiGe nanowire pMOSFETs (NWT) for 7nm and beyond with Ge component varies from 20% to 90% are simulated by different methods including drift-diffusion (DD) vs Monte Carlo (MC) method for transport, and the Poisson-Schrödinger solver(PS) vs the density gradient (DG) approach for quantum effect. The impact of Ge component variation on the performance of pMOSFETs is also evaluated.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.