This paper presents high-efficiency Unitravelling carrier photodiodes for THz communications. Using high-level modulation schemes, QAM-16 and 32 Gbit/s data-rate is obtained using these devices, that combine high power level and linear behavior, mandatory for high-spectral efficiency data links in the THz range.
This paper presents the development and use of high-efficiency Unitravelling carrier photodiodes for THz communications. Using these devices, high output power is obtained close to the mW level. THz wireless links demonstration is also presented using these devices, using high-level modulation schemes (QAM-16) and 32 Gbit/s data-rate. This result demonstrates the capability of the UTC-PD devices of...
We investigate optical resonant cavities using metallic mirror in order to increase the absorption in low-temperature-grown GaAs (LT-GaAs) based photoconductors operating at telecom wavelength. Two different semi-transparent front mirrors are compared: the first one is a thin gold layer whereas the second one consists of a gold periodic array. We show that the generated photocurrent is 3 times higher...
With the fast increase of mobile data transfers, wireless communications carrier frequencies have entered in the millimeter wave region and now they enter in the submillimeter or terahertz region. In this context photonic-based emitters have several advantages, we will present our communication links results using photomixers at 0.2, 0.4 and 0.6 THz.
By combining a UTC-PD as a THz emitter and a 400 GHz Schottky-based heterodyne detection, we realized an indoor THz link working up to 22 Gbps at 400 GHz carrier frequency with ultra-low THz power. The eye diagram at receiver is clearly opened are the system is working with only 1 µW received THz power.
It is shown that a continuous wave output power reaching 1.8 mW at 252 GHz can be generated by photomixing in a low-temperature-grown GaAs photoconductor using a metallic mirror-based Fabry-Pérot cavity thanks to an impedance matching circuit.
Low phase noise and tunable THz-signals from 300 GHz to 1 THz are obtained with a combination of a unitravelling carrier photodiode and a solid-state dual-frequency laser at 1.5 µm. The spectral purity is precisely characterized. Phase noises as low as −20 dBc/Hz at 1 kHz offset from the carrier frequency and an Allan deviation of 3·10−5 on 100 s are obtained.
We present a way of bonding low-temperature-grown (LTG) GaAs to high thermal conductivity substrates. This should improve thermal dissipation and increase the output power of photoconductors, which has far-reaching consequences for many applications of THz photomixers.
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