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This paper presents a comparative evaluation of the loss and thermal performance of two advanced three-level inverter topologies, namely the SiC based T-Type and the Hybrid-NPC, both of which are aimed at reducing the high switching losses associated with a conventional Si based T-Type inverter. The first solution directly replaces the 1200V primary Si IGBT switches with lower loss 1200V SiC MOSFETs...
This paper gives a comprehensive comparison of two promising silicon carbide (SiC) switching devices, i.e. normally-off SiC MOSFET and a normally-on SiC JFET, as alternatives to a conventional state of the art Si IGBT. The comparison uses datasheet information to determine conduction losses, switching transition measurements for switching loss calculations and electrical power measurements in a boost...
This paper deals with the switching behavior of a SiC MOSFET in a TO-247 package. Based on simulations, critical parasitic inductances in the circuit layout are analyzed and their effect on the switching losses highlighted. Especially the common source inductance, a critical parameter in a TO-247 package, has a major influence on the switching energy. Crucial design guidelines for an improved double...
This paper deals with a 3kW multilevel inverter used for PV applications. A comparison has been made based on simulations using IGBTs and SiC MOSFETs to see how much efficiency can be gained when SiC diodes are used. A prototype with the same IGBTs and SiC MOSFETs has been built but using regular soft-recovery Si diodes instead of SiC diodes. Efficiencies and switching transitions for different switching...
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