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The detection properties of a field-effect transistor with a low Schottky barrier gate in the microwave and terahertz ranges has been studied theoretically. Different detector circuits have been considered. The voltage and current distributions along the channel, the input impedance of the transistor, sensitivity, and noise equivalent power have been found. The influence of the Schottky barrier height...
New structures of sensitive elements based on asymmetric low-barrier metal-semiconductormetal structures are proposed. The structures can be used for the detection of microwave or terahertz signals. A vertical structure with different barrier heights of two metal-semiconductor junctions and a planar structure with different areas of junctions are studied. It is demonstrated that the sensitive element...
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