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In this article, we demonstrate plasma-enhanced atomic layer deposition (PEALD) as an effective passivation technique to establish high interfacial quality of high-k/InGaAs structures. Performing PEALD-AlN as an interfacial passivation layer (IPL), excellent capacitance-voltage (C-V) characteristics have been achieved for the HfO2/n, p-In0.53Ga0.47As MOSCAPs. The effects of AlN-IPL on the effective...
An enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched (NBE) gate recess is reported. The NBE can eliminate the plasma-induced defects that generated by irradiating UV/VUV photons as encounted in the conventional inductively coupled plasma-reactive-ion etching (ICP-RIE). Combining the new gate recess process and PEALD-AlN interfacial passivation...
In situ PEALD processes, including PEALD-AlN pre-gate and post-gate plasma gas treatments, have been studied as a promising passivation method to realize the high interfacial quality of high-k/III-V structures. The formation of excellent dielectric gate stack has been obtained on the HfO2/n, p-In0.53Ga0.47As MOSCAPs by inserting an AlN interfacial layer. The improvements on the electrical properties...
High mobility InxGa1−xAs material is one of the most promising candidates as channel material for post CMOS device applications. In this presentation, InxGa1−xAs material based MOS capacitors will be studied for possible applications for future III-V MOSFET, TFET and FINFET devices. To improve the gate leakage of the InxGa1−xAs MOSCAP, the combination of wet chemical treatment and in-situ trimethyl...
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