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Warpage in Insulated Gate Bipolar Transistor (IGBT) module is induced by the unavoidable mismatch of materials and asymmetric structure in almost every packaging process. The high level of warpage and thermal stress is introduced during reflow processes, which can impact the IGBT reliability. Pre-warping substrate method has been used as industry practice for reducing warpage due to reflow. The method...
Inevitable and severe warpage and stress due to serious mismatch in coefficient of thermal expansion (CTE) between direct bond copper (DBC) plate and copper substrate will be induced into power devices during the reflow process, in which the ambient temperature around the package structure varies from room temperature to die attach solidification temperature and finally to room temperature. The existed...
With the trend to be smaller, more integration and higher power in power electronic technology, the cooling problem has become increasingly prominent for those high power devices. Micro-channel in substrate, as an effective cooling method, has been proposed and investigated by many researchers in recent years. Warpage and stress, naturally existing in all the packaging processes due to the unavoidable...
With the trend to be smaller, more integration and higher power in power electronic technology, the cooling problem has become increasingly prominent for those high power devices. Micro-channel in substrate, as an effective cooling method, has been proposed and investigated by many researchers in recent years. Warpage and stress, naturally existing in all the packaging processes due to the unavoidable...
The problem of heat dissipation of high power electronics such as IGBT (Insulated Gate Bipolar Transistors) has puzzled us for long time. If the heat generated from the chips could not be eliminated away from the devices, the failure rate would rise rapidly. To deal with this problem, the micro pumps along with the microchannel embedded in the DBC substrate are proposed to remove the heat actively...
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