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This paper presents the development and use of high-efficiency Unitravelling carrier photodiodes for THz communications. Using these devices, high output power is obtained close to the mW level. THz wireless links demonstration is also presented using these devices, using high-level modulation schemes (QAM-16) and 32 Gbit/s data-rate. This result demonstrates the capability of the UTC-PD devices of...
In this paper, we propose a new architecture of photomixer in order to develop a wideband and powerful photomixing THz source. It is achieved by a velocity-matched distributed photoconductor, in which the pump optical power is guided in a dielectric optical guide and slightly coupled to a low-temperature grown GaAs 1-mm-length photoconductor.
It is shown that a continuous wave output power reaching 1.8 mW at 252 GHz can be generated by photomixing in a low-temperature-grown GaAs photoconductor using a metallic mirror-based Fabry-Pérot cavity thanks to an impedance matching circuit.
It is shown that a continuous wave output power of 0.35 mW at 305 GHz can be generated by photomixing in a low temperature grown GaAs photoconductor using a metallic mirror Fabry-Pérot cavity. The output power is improved by a factor of about 100 as compared to the previous works on GaAs photomixers.
It is shown from on-wafer measurement that a continuous wave output power of 0.35 mW at 305 GHz can be generated by photomixing in a metal-metal Fabry-Pérot GaAs photoconductor.
We report the continuous wave generation delivered by on ion-irradiated In0.53Ga0.47As photomixers coupled to transverse-electromagnetic-horn antenna using two lasers operating at ~1.55 μm wavelength. Output powers up to 0.1 μW at 700 GHz have been achieved. The output power in a regime of Ohmic transport or recombination-limited transport is analyzed.
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