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A high breakdown voltage AlGaN/GaN HEMTs is fabricated by using source-connected field plate (SCFP) in Dynax. The output capacitance (Cds) of this device shows a strong dependence on Vds. A modified Angelov large signal model considering Cds nonlinearity is presented to achieve a more accurate simulation on efficiency and linearity. The small signal simulation results indicate that the proposed nonlinear...
This paper demonstrates a 180W packaged AlGaN/GaN HEMT targeted for S-band application, operating at 48V drain bias voltage. Under WCDMA (with DPD) test, the average power and drain efficiency are 35W and 33.3%. After 1000 hours HTRB test, no electrical failure of the device is observed.
This paper proposes an improved small signal model (SSM) for 90 nm gate-length AlGaN/GaN HEMTs. A mesa edge effect capacitance (CMEE) is introduced into the small signal model to characterize the mesa edge effect. Using scaling formula, the value of CMEE is obtained as 5.1fF. This capacitance makes fT degeneration, especially in small gate-width (Wg) AlGaN/GaN HEMTs. After de-embedding CMEE from AlGaN/GaN...
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