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This paper presents a fully integrated 60GHz transceiver module in a 65nm CMOS technology for wireless high-definition video streaming. The CMOS chip is compatible with the WirelessHD™ standard, covers the four channels and supports 16-QAM OFDM signals including the analog baseband. The ESD-protected die (9.3mm2) is flip-chipped atop a High Temperature Cofired Ceramic (HTCC) substrate, which receives...
This work describes an UWB impulse transmitter with integrated antenna in the 60 GHz band implemented in CMOS65nm SOI technology. The transmitter aims low-power short-range high data-rate communication systems for fast-downloading applications. It consists of an oscillator that is switched on-and-off by the digital data to be transmitted and a medium power amplifier. The transmitter is fabricated...
A complete frequency synthesizer occupying 1.1 mm2 in 65 nm CMOS is presented. It is composed of a push-push quadrature VCO that delivers two L0 signals in 20 and 40 GHz bands. The PLL consumes 80 mW including buffers, and achieves a phase noise lower than -100 and -97.5 dBc/Hz for the 20 GHz and the 40 GHz signals, respectively.
A 60 GHz wideband power amplifier (PA) is fabricated in standard CMOS SOI 65 nm process. The PA is constituted by two cascode stages. Input, output and inter-stage matching use coplanar wave guide (CPW) transmission lines that have low losses thanks to the high resistivity SOI substrate. The PA measurements are carried out for supply voltages VDD going from 1.2 V to 2.6 V and achieve a saturation...
In this paper the design flow of a 60 GHz LNA in a standard CMOS SOI technology is described. First the 60 GHz band opportunities for very high data rate (multi Gbit/sec) wireless communication systems is presented. Then the paper showed the modeling approach for transmission lines as well as for transistors. Passive elements are modeled with the help of HFSS 3D electromagnetic simulator, whilst the...
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