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We review the operation mechanisms of the Z2-FET underlining its attractiveness as a capacitorless DRAM memory. The main parameters that govern the memory performance are discussed based on systematic experiments and simulations.
It has been shown that sub 100nm SRAM is particularly sensitive to stochastic device variability. In this paper we consider two correlated figures of merit for SRAM, Static Noise Margin (SNM) and Read Current. For the purposes of this paper 1,000 3D atomistic simulations of microscopically different 25nm P and N bulk MOSFETs were performed, and statistical compact models were then extracted for each...
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