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Carbon nanotube field effect transistor (CNTFET) is one of the novel nanoelectronic devices that overcome those MOSFETs limitations. In this paper we have studied the effect of scaling of Schottky Barrier CNTFET (SB_CNTFET) insulator thickness (tox), high k dielectric materials, Gate length (LG), LG/tox Ratio and Schottky Barrier height on current-voltage characteristics of SB_CNTFET. The device metrics...
For the first time, an asymmetric lightly doped Schottky barrier carbon nanotube field effect transistor (SB_CNTFETs) is proposed and simulated using quantum simulations. Comparisons are made among four SB_CNTFETs structures for electrical characteristics. One is the conventional SB_CNTFET with an intrinsic channel. The other proposed and studied designations are an asymmetrically doped SB_CNTFET...
A theoretical study is presented on the on/off current ratio limits for a ballistic coaxially-gated carbon nanotube field effect transistor with metal source/drain contacts (SB-CNTFET). Based on changes in gate insulator dielectric constant and thickness, the current ratio has been estimated at different ambient temperatures. Decreasing the gate insulator thickness after a certain value around 3 nm...
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