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Parasitic capacitance in nanoscale FETs is becoming a dominant component of the total device capacitance which degrades device and circuit performance. This problem is exacerbated with the introduction of multigate FETs such as FinFET and gate-all-around FETs. In this paper, we introduce the corner spacer design for gate-all-around nanowire FET to significantly decrease parasitic capacitance with...
The highest reported sensitivity (35%) of DNA sieving by entropic trapping has been achieved with a low operation voltage of 8V, and short time of 6 minutes. Wafer scale fabrication of 3D artificial nano-channel matrices is based on proven NEMS, MEMS, and Through-Si-Via (TSV) semiconductor technologies and offers high potential for application in portable bioelectronic instruments. A mechanism based...
This is the first study to successfully achieve record DNA sensitivity (sub-ƒM) by self-aligned, maskless, dual-channel, and metal-gate-based thin-film transistor nano-wire FET. Both novel device architecture (dual-channel) and optimization of integration processes (microcrystalline silicon and self-aligned sidewall sub-50 nm critical dimension) of nano-wire FET enhance the sensitivity to biological...
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