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The record high peak mobility of ~1050 cm2/V-s on (001) Ge substrate is demonstrated in NFET. High-quality Ge/GeO2 interface is ensured by rapid thermal oxidation (RTO) and remote ozone plasma treatment. The best achieved subthreshold swing is 150mV/dec and the on/off ratio is 2×104. The low defective n+/p junction produced a record high on/off ratio of 2×105, an ideality factor of 1.05 and strong...
Si-tunneling field effect transistors (TFETs) with a record Ion >100 μA/μm and high Ion/Ioff ratio (> 105) at Vds=1V are reported. Using an optimal spike and millisec flash anneal coupled with an engineered source-gate overlap through a gate-last process, Si TFETs have been demonstrated with 10 to 1000 times greater current than previously reported. The devices exhibit negative differential...
We report a novel tunneling field effect transistor (TFET) fabricated with a high-k/metal gate stack and using nickel silicide to create a special field-enhancing geometry and a high dopant density by dopant segregation. It produces steep subthreshold swing (SS) of 46 mV/dec and high ION/IOFF ratio (~108) and the experiment was successfully repeated after two months. Its superior operation is explained...
For the first time, growth of high-quality Ge-rich Ge1-xSix (0 ?? ?? ?? 0.14) layers on Ge substrate was demonstrated. An effective suppression of the phosphorus diffusion in Ge1-xSix and a better thermal stability of the nickel germanide on Ge1-xSix were observed. A higher rectifying ratio with a reduced diode leakage current in n+-Ge1-xSix/p-Ge1-xSix is compared with n+-Ge/p-Ge. These results indicate...
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