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A planar-type InGaAs/InP-heterostructure APD with an InGaAsP buffer layer was made by using a VPE technique. To avoid the edge breakdown, a guard-ring structure was employed. The average received optical power for a 10?9 error rate at 280 Mbit/s was as low as ?43 dBm, which corresponded to 2 and 7 dB improvements over a Ge-APD at 1.52 and 1.59 ?m, respectively.
The experimental receiver sensitivity of an InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers is reported. The receiver sensitivity, measured at 1.5?1.6 ?m wavelength and 280 Mbit/s, was ?38.7 dBm for a 10?9 error rate, although the optimisations were not performed. But this sensitivity was better than that of a p+?n Ge-APD by 2.5 dB at 1.59 ?m wavelength.
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