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As dimension of middle-of-line contacts scale down, the Tungsten (W) gap-fill capability is critical, and we started to see function failure in SRAM and logic circuit caused by W-voids. We had observed that formation of W-voids is related to the contact profile, nucleation/barrier on sidewall, and deposition methods. Furthermore, even those initially “good” W-plugs are formed, the subsequent process...
As dimension of middle-of-line contacts scale down, the Tungsten (W) gap-fill capability is critical, and we starts to see function failure in SRAM and logic circuit caused by W-voids. We had observed that formation of W-voids is related to the contact profile, nucleation/barrier on sidewall, and deposition methods. Furthermore, even those initially "good" W-plugs are formed, the subsequent...
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