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Thermal oxidation of SiC(0001) substrates with La2O3 capped annealing has been performed. La2O3 capped oxidation has shown improvements in reduced hysteresis and interface state density (Dit) for MOS capacitors. La-silicate grains, agglomerated at the step bunches of SiC substrates, have been confirmed upon oxidation. We can anticipated that La-silicate grains are likely to passivate the charge trapping...
In this paper, Enhanced oxidation of SiC(0001) substrates using La2O3 capped annealing has been presented. Compared to thermal oxidation, lower oxidation temperature can be implemented to form SiO2 layer, owing to higher oxidation rate by 10 times with La2O3 capped oxidation by catalytic effect of the film. Although oxidation kinetics are based on oxidation through step faces, the roughness of created...
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