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The combined effects of hydrostatic pressure and voltage contact on subband structure and optical transitions in GaAs delta-MIGFET (Delta-Multiple Independent Gate Field Effect Transistor) have been theoretically studied. Results obtained show the optical absorption is quite sensitive to the applied hydrostatic pressure and contact voltage. These can be suitable for good optical performance and various...
This work presents a development kit to simulate the behavior of load flow an Voltage Stability of a power system. The network is designed and implemented to be useful as a tool in engineering studies and laboratory practices; also the measurement of steady state is compared with its digital behavior simulation using Power World software. The system configuration has been extracted from one similar...
The structural and magnetic properties of Ru1−xMoxSr2GdCu2O8 with 0.0 ≤ x ≤ 0.50 were investigated through Mo substitution in the Ru sites. Samples were synthesized by solid-state reaction at ambient pressure at temperature between 960 °C and 1060 °C. X-ray diffraction results indicate that the partial substitution of Ru by Mo within the studied level of doping takes place isostructurally in a tetragonal...
The theoretical study of linear and nonlinear optical absorption in a GaAs n-type δ-MIGFET transistor is preformed taking into account the effects of applied electric field and contact voltage. From our results, it is found that the position and the magnitude of the linear, nonlinear and total absorption coefficient are quite sensitive to electric field and voltage contact. Besides, the incident optical...
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