The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Parasitic turn-on can cause unintentional triggering of the IGBTs since the discharge current of the Miller capacitance coupled with high dV/dt can activate a device that should be off. The short circuit current resulting from parasitic turn-on coupled with the high voltage causes significant power dissipation which can be a reliability issue. This issue is exacerbated by higher ambient temperatures...
This paper investigates the physics of device failure during avalanche for 1.2 kV SiC MOSFETs, silicon MOSFETs and silicon IGBTs. The impact of ambient temperature, initial conditions of the device prior to avalanche breakdown and the avalanche duration is explored for the different technologies. Two types of tests were conducted namely (i) constant avalanche duration with different peak avalanche...
Using the Fourier series solution to the ambipolar diffusion equation, the robustness of the body diodes of SiC MOSFETs during reverse recovery has been studied. Parasitic bipolar latch-up during the reverse recovery of the body diode is a possible if there is sufficient base current and voltage drop across the body resistance to forward bias the parasitic BJT. SiC MOSFETs have very low carrier lifetime...
Distributed Energy sources can be connected to the electrical grid using power electronic converters traditionally implemented in silicon insulated gate bipolar transistors (IGBTs), gate turn-off thyristors (GTOs) and PiN diodes. However, recently developed SiC technology can improve energy conversion efficiency as well as power density. To investigate the benefits provided by SiC technology, experimentally...
This paper aims to examine the role(s) that the various vehicles of marketing communications can play with respect to communicating, publicising and highlighting organisational CSR policies to its various stakeholders. It will further endeavour to evaluate the impact of such communications on an organisation’s corporate reputation and brand image. The proliferation of unsubstantiated ethical claims...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.