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We report the successful growth of vanadium dioxide (VO 2 ) films on SiO 2 buffered metal electrode and the fabrication of metal–oxide-insulator–metal (MOIM) junction. The VO 2 film has an abrupt thermal-induced metal–insulator transition (MIT) with a change of resistance of 2 orders of magnitude. The electrically-driven MIT (E-MIT) switching characteristics have been investigated...
We report the growth of vanadium dioxide (VO2) films on metal electrode with a thin SiO2 buffer and the fabrication of nanoscale metal-oxide-metal junction. The thermal-induced metal-insulator transition with a change of resistance of 2 orders of magnitude is observed and the threshold voltage is as low as 1.6V.
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